Method of making layered superlattice materials for ferroelectri

Details Method of making layered superlattice materials for ferroelectri Method of making layered superlattice materials for ferroelectri

1995-06-07

2000-06-27

Dutton, Brian

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, H01L 2100, H01L 218242

Patent

active

060805927

ABSTRACT:
An integrated curcuit includes a layered superlattice material having the .sub.formula A1w1.sup.+a1 A2.sub.w2.sup.+a2 . . . Aj.sub.wj.sup.+aj S1.sub.x1.sup.+s1 S2.sub.x2.sup.+s2 . . . Sk.sub.xk.sup.+sk B1.sub.y1.sup.+b1 B2.sub.y2.sup.+b2 . . . Bl.sub.yl.sup.+bl Q.sub.z.sup.-2, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories. Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories.

REFERENCES:
patent: 2695396 (1954-11-01), Anderson
patent: 2992929 (1961-07-01), Clement et al.
patent: 3529978 (1970-09-01), Taylor et al.
patent: 3619744 (1971-11-01), Stephenson
patent: 3977887 (1976-08-01), McIntosh
patent: 4144591 (1979-03-01), Brody
patent: 4149301 (1979-04-01), Cook
patent: 4244722 (1981-01-01), Tsuya et al.
patent: 4360896 (1982-11-01), Brody
patent: 4503482 (1985-03-01), Hennings et al.
patent: 4697222 (1987-09-01), Kaneko et al.
patent: 4700457 (1987-10-01), Matsukawa
patent: 4792463 (1988-12-01), Okada et al.
patent: 4917810 (1990-04-01), Tsunooka et al.
patent: 4918350 (1990-04-01), Ando et al.
patent: 4978646 (1990-12-01), Bardhan et al.
patent: 5024964 (1991-06-01), Rohrer et al.
patent: 5046043 (1991-09-01), Miller et al.
patent: 5109357 (1992-04-01), Eaton, Jr.
patent: 5109771 (1992-05-01), Lewis et al.
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5219787 (1993-06-01), Carey et al.
patent: 5369068 (1994-11-01), Kaneko
Melnick, B.M. et al., "Process Optimization and Characterization of Device Sol-gel Based PZT for Ferroelectric Memories," Ferroelectrics, 1990, vol. 109.
Lines, M.E., et al. "Principles and Applications of Ferroelectrics and Related Materials," Clarendon Press, Oxford 1977.
Smolenskii, G.A., et al, "Ferroelectrics and Related Materials," Gordon and Breach, 1984 with (Ba.sub.x Sr.sub.1x) TiO.sub.3 for 256M Dram IEDM Dec. 1991.
Smolenskii, G.A., et al. "Dielectric Polarization of a Number of Complex Compounds" Fizika Tverdogo Tela, V. 1, No. 10, pp. 1562-1572 (Oct. 1959).
Smolenskii, G.A., et al., "New Ferroelectrics of complex Composition," Soviet Physics-Technical Physics, 907-908 (1959).
Smolenskii, G.A., et al., "Ferroelectrics of the Oxygen-Octahedral Type with Layered Structure," Soviet Physics-Solid State v. 3, No. 3. pp 651-566, Sep. 1961.
Subbarao, E.C., "A Family of Ferroelectric Bismuth Compounds," J. Phys. Chem. Solids, V. 23, pp. 665-676 (1962) & Chapt. 8, pp. 241-292 & pp. 624-625.
Wu, Shu-Yau, "A New Ferroelectric Memory Device, Metal-Ferroelectric-Semiconductor Transistor," IEEE Transactions on Electron Devices, Aug. '74, vol. ED-21, No. 8, pp. 499-504.
Scott, J.F., et al., "Integrated Ferroelectrics," vol. I, No. 3 1992 Condensed.
Abt, N.E., et al., Anamolous Remanent Polarization in Ferroelectric Capacitors Integrated Ferroelectrics, 1992, vol. 2 pp. 121-131.
"Ferroelectric Thin Films for Integrated Electronics," 17 slides presented in a talk presented by Donald Lampe of Westinghouse Advanced Technology Divisions Science and Technology Center at the International Symposium on Applications of Ferroelectrics (ISAF) Aug. 31-Sep. 2, 1992, Greenville, S.C.
Aurivillius, Bengt, "Mixed Oxides With Layer Lattices," Arkiv for Kemiband 2 nr 37, Communicated May 21, 1950, by Arne Westgren & Percy Quensel.
Joshi, P.C., et al., "Structural and Optical Properties of Ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 Thin Films by Sol-Gel Technique," Appl. Phys. Lett., vol. 59, No. 10, Nov.
K. Sugibuchi, Y. Kurogi, & N. Endo, "Ferroelectric Field-Effect memory Device Using Bi.sub.4 Ti.sub.3 O.sub.12 Film," Central Research Labs., Nippon Electric Co., Ltd., Kawasaki, Japan (rec'd Oct., 30 1974; in final form Feb. 7 1975).
Wu, S.Y., "Memory Retention and Switching Behavior of Metal-Ferroelectric-Semiconductor Transistors," Ferroelectrics, vol. 11, 1976, pp. 379-383.
Subbarao, E.C., "Ferroelectricity in Mixed Bismuth Oxides with Layered-Type Structure," J.Chem. Physics, vol. 34, 695 (1961).

Affiliated with

Also associated with

Rating

Method of making layered superlattice materials for ferroelectri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making layered superlattice materials for ferroelectri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making layered superlattice materials for ferroelectri will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1783508