Non-monocrystalline silicon carbide semiconductor, process of pr

Details Non-monocrystalline silicon carbide semiconductor, process of pr Non-monocrystalline silicon carbide semiconductor, process of pr

1992-02-25

1994-11-08

Kunemund, Robert

Fishing, trapping, and vermin destroying

437100, 427575, H01L 21205

Patent

active

053626842

ABSTRACT:
A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5.ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.

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"Physics of Semiconductor Devices" Second Edition, S. M. Sze. Bell Laboratories, Incorporated, Murray Hill, N.J. pp. 88-93.
"Information about Band-Tail States from Time-of-Flight Experiments" by T. Tiedje, Semiconductors and Semimetals, vol. 21, Part C. 1984, pp. 207-238.
Richard et al, "Preparation of Hydrogenated Silicon Carbide Thin Films . . . " Vide, Couches Minces 196, Suppl. 287-924, abs only 1979.
Catherine et al, "Gas Phase and Surface Reaction on Plasma Deposition of H-D-Doped S.C", Vide, Couches Minces, 201 (Suppl. Proc. Int. Vac. Congre 1980 abs only.

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