Plasma etching process control

Details Plasma etching process control Plasma etching process control

1992-01-14

1994-11-08

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156651, 156657, H01L 2100

Patent

active

053623568

ABSTRACT:
A passive, in-line method of monitoring film removal (or deposition) during plasma etching (or deposition) based on interference phenomena is disclosed. Plasma emission intensity is monitored at a selected wavelength, without additional illuminating apparatus, and variations in plasma emission intensity are correlated to remaining film thickness, etch rate and uniformity, and etch selectivity. The method is useful in conjunction with nitride island etch, polysilicon etch, oxide spacer etch, contact etch, etc. The method is also useful in determining a particular remaining film thickness (e.g., just prior to clearing) at which point the etch recipe can be changed from a high-rate, low selectivity etch to a low-rate, high-selectivity etch.

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