Method for etching in dry process

Details Method for etching in dry process Method for etching in dry process

1993-11-24

1994-11-08

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, 156666, B44C 122, C23F 100

Patent

active

053623509

ABSTRACT:
A method for etching a copper layer in dry process includes the steps of forming a copper layer on a substrate, heating the substrate, etching the copper layer while using an etching gas. The etching gas includes iodine halide such as pentafuluoride, ioeine heptafuluoride, iodine monochloride and iodine trichloride. The copper layer is etched while sublimating cuprous iodide of a reaction product.

REFERENCES:
patent: 5200032 (1993-04-01), Shinohara
patent: 5277757 (1994-01-01), Sato
patent: 5281304 (1994-01-01), Kadomura

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