Semiconductor device exhibiting no degradation of low current ga

Details Semiconductor device exhibiting no degradation of low current ga Semiconductor device exhibiting no degradation of low current ga

1988-09-02

1990-02-27

Carroll, J.

357 6, 357 34, 357 86, H01L 4902, H01L 2972, H01L 2702

Patent

active

049050702

ABSTRACT:
The degradation of the low current gain, which is exhibited during emitter-base reverse bias breakdown testing, is prevented by providing an emitter-base resistive shunt on the surface. This resistive shunt, preferably made of silicon nitride. utilizes surface recombination to reduce the low current gain permanently, thus a degradation is not exhibited upon testing.

REFERENCES:
patent: 3979613 (1976-09-01), Kroger et al.
patent: 4000506 (1976-12-01), Hirai et al.
patent: 4009483 (1977-02-01), Clark
patent: 4142112 (1979-02-01), Kroger
patent: 4288776 (1981-09-01), Holmes
patent: 4786612 (1988-11-01), Yau et al.

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