Semiconductor memory device having improved isolation structure

Details Semiconductor memory device having improved isolation structure Semiconductor memory device having improved isolation structure

1994-05-16

1995-10-31

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257513, 257630, H01L 2978

Patent

active

054632366

ABSTRACT:
A semiconductor memory device including a plurality of memory cells of one-transistor and one-capacitor type is disclosed. The memory cells are formed respectively in active regions each isolated from peripheral active regions by trench isolation regions in a first direction and by isolation gate conductors supplied with a bias potential in a second direction perpendicular to the first direction. Each of the trench isolation regions comprises a trench selectively formed in a semiconductor substrate and a first insulating film filling the trench and each of the isolation conductors is formed simultaneously with word lines and is thus isolated from the substrate by a second insulating film which has the same thickness as the gate insulating film of the cell transistor.

REFERENCES:
patent: 5045899 (1991-09-01), Arimoto
patent: 5111257 (1992-05-01), Andoh et al.
patent: 5225704 (1993-07-01), Wakamiya et al.
patent: 5245212 (1993-09-01), Gill

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