Non-volatile register and method for accessing data therein

Static information storage and retrieval – Systems using particular element – Ferroelectric

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365149, 365102, G11C 1122

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active

055924115

ABSTRACT:
The present invention provides a non-volatile register (10) and a method for writing data into and reading data from the non-volatile register (10). When writing, a first pair of ferroelectric capacitors (14, 16) receives a data signal via a first pass gate (12) and a second pair of ferroelectric capacitors (24, 26) receives a complementary data signal via a second pass gate (32). An extraction signal and a restoration signal place the two pairs of ferroelectric capacitors (14, 16, 24, 26) into their respective polarization states depending on the data. When reading, the extraction signal produces a voltage difference in accordance with the data stored in the register (10) appearing at two voltage electrodes of a voltage detector (18). The voltage difference is amplified and transmitted from the register (10) via the two pass gates (12, 32). The restoration signal restores the data back to the non-volatile register (10).

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Ramtron International Corporation, "Fram Technology", Jan. 1994.
Ramtron International Corporation, "Benefits of Ramtron's FM24C04 Serial FRAM Memory", Feb. 1994.

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