Plasma treatment method

Details Plasma treatment method Plasma treatment method

1996-08-23

1998-12-08

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 71, 216 67, 438710, H01L 2100

Patent

active

058468854

ABSTRACT:
In a plasma equipment and a plasma treatment method of a semiconductor device capable of reducing electron shading effect and also suppressing charge damage without affecting various characteristics in plasma process, a distance between a substrate bias electrode and A counter electrode is set less than two times as long as a mean free path of electron. High frequency electric power of 100 kHz to 1 MHz is supplied to the substrate bias electrode, while high frequency electric power of 1 MHz to 100 MHz is supplied to the counter electrode.

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