Integrated circuit which uses a damascene process for producing

Details Integrated circuit which uses a damascene process for producing Integrated circuit which uses a damascene process for producing

1996-06-05

1998-12-08

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438629, 438633, 438637, 438638, 438700, H01L 214763

Patent

active

058468765

ABSTRACT:
An improved multilevel interconnect structure is provided. The interconnect structure includes several levels of conductors, wherein conductors on one level are staggered with respect to conductors on another level. In densely spaced interconnect areas, interposed conductors are drawn to dissimilar elevational levels to lessen the capacitive coupling between the interconnects. By staggering every other interconnect line in the densely patterned areas, the interconnects are capable of carrying a larger amount of current with minimal capacitive coupling therebetween.

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