Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1996-02-02
1998-12-08
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438586, 438592, 438639, 438668, 438671, 438637, H01L 213205
Patent
active
058468730
ABSTRACT:
A method of creating ultra-small nibble structures using a modification of an already existing mask includes the steps of depositing a layer of nitride on a circuit being fabricated according to standard MOSFET process steps. A layer of photoresist is patterned using a modification of an existing mask, such as a contact mask modified to include a nibble pattern. The nitride layer and an underlying oxide layer are removed according to the patterned photoresist to create a contact opening and an opening over the field oxide. Spacers may be created in the opening over the field oxide. A conductive layer and a polysilicon layer exposed in the opening over the field oxide are removed extending the opening down to the field oxide to create a nibble structure in the polysilicon layer.
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Gonzalez Fernando
Violette Michael P.
Chaudhuri Olik
Gurley Lynne A.
Micro)n Technology, Inc.
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