Method of producing structures from double layers of metal silic

Details Method of producing structures from double layers of metal silic Method of producing structures from double layers of metal silic

1983-05-02

1984-09-25

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 156662, 204192E, 252 791, H01L 2128, H01L 21308

Patent

active

044734360

ABSTRACT:
The invention provides a method of producing structures from double layers composed of a metal silicide (4) and polysilicon (3) on a silicon substrate (1) containing integrated semiconductor circuits in an operational plate reactor by reactive ion etching and with the use of a photosensitive resist mask (5) on the double layer to define desired structures. The plate reactor is provided with a controlled reactive gas mixture which contains fluorine and chlorine. The double layer (3, 4) in preferred embodiments is composed of a tantalum silicide layer and a polysilicon layer. An insulating layer (2) can be provided between the substrate and the double layer. The invention is useful for providing low-resistant interconnects in VLSI circuits.

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