Memory device having circuitry for initializing and reprogrammin

Electrical computers and digital processing systems: memory – Storage accessing and control – Hierarchical memories

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395803, 395570, 395567, 711206, G06F13/00

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active

059059095

ABSTRACT:
A synchronous dynamic random access memory (SDRAM) device having a master control circuit for accepting a first command and a second command and having an initialization and reprogramming circuit. The master control circuit generates and initialization signal in response to the first command and generates a reprogramming signal in response to the second command. The initialization and reprogramming circuit responds to the initialization signal to control initial programming of a control operation feature and responds to the reprogramming signal to control a reprogramming of the control operation feature.

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patent: 5386385 (1995-01-01), Stephens, Jr.
"Fast DRAMs Can Be Swapped for SRAM Caches"--Electronic Design, Jul. 22, 1993 pp. 55-67.
"Synchronous DRAMs Clock at 100 MHz"--Electronic Design, Feb. 18, 1993 pp. 45-49.

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