Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1984-01-26

1986-05-13

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148175, 148187, 29576B, 29580, 29610SG, 156647, 156653, 156657, 156662, 73777, 338 4, 357 55, H01L 21306, B44C 122, C03C 1500, C03C 2506

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active

045884722

ABSTRACT:
This invention relates to the method of forming a semiconductor device having a diaphragm.
A highly doped semiconductor region is formed in the peripheral portion of the semiconductor substrate around the part in which the diaphragm is to be formed, and then that part is etched. Thereby, the diaphragm of a semiconductor pressure sensor can be formed very accurately to a desired shape.

REFERENCES:
patent: 3893228 (1975-07-01), George et al.
patent: 4108715 (1978-08-01), Ishikawa et al.
patent: 4293373 (1981-10-01), Greenwood
IEEE Electron Device Letters, vol. EDL-2, No. 2, Feb. 1981, An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures, Jackson et al., pp. 44-45.
J. Electrochem. Soc., vol. 118, No. 2, Feb. 1971, Ethylene Diamine-Pyrocatechol-Water Mixture Shows Etching Anomaly in Boron-Doped Silicon, Bohg, pp. 401-402.
IEDM Technical Digest, Dec. 1978, Diaphragm Formation and Pressure Sensitivity in Batch-Fabricated Silicon Pressure Sensors, Wise et al., pp. 96-99.
Allan, "New Applications Open Up for Silicon Sensors: A Special Report", in Electronics (Nov. 6, 1980), pp. 113-122.
Angell et al., "Mikromechanik Aus Silicium", in Spektrum der Wissenschaft (Jun. 1983), pp. 38-50.
"Dreidimensionale Strukturierung des Siliciums Zum Herstellen von Sensoren", in Elektronik Produktion & Pruftechnik (Mar. 1983), pp. 110-112.

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