Thin-film transistor and method for fabricating same and liquid

Details Thin-film transistor and method for fabricating same and liquid Thin-film transistor and method for fabricating same and liquid

1996-11-15

1998-12-08

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438159, H01L 2100

Patent

active

058468552

ABSTRACT:
A thin-film transistor including a gate electrode provided on a substrate, a gate insulation film provided on the gate electrode, an operative semiconductor film provided on the gate insulation film, and a channel protection film provided on the operative semiconductor film. Semiconductor contact portions are disposed so that they are covered by the channel protection film on either side of the operative semiconductor film. A source electrode and a drain electrode are connected to the semiconductor contact portions on either side of the channel protection film. The thin-film transistor can minimize the stray capacitance due to the overlapping of the source and drain electrodes with the gate electrode and is excellent in the contact characteristic. Also, a method for fabricating a thin-film transistor is disclosed.

REFERENCES:
patent: 5637519 (1997-06-01), Tsai

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