Semiconductor device having a wiring layer with a barrier layer

Details Semiconductor device having a wiring layer with a barrier layer Semiconductor device having a wiring layer with a barrier layer

1994-10-28

1997-01-07

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257752, 257760, 257763, 257764, 257762, 257915, H01L 23535, H01L 2941, H01L 2943

Patent

active

055920241

ABSTRACT:
A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.

REFERENCES:
patent: 4091406 (1978-05-01), Lewis
patent: 4789648 (1988-12-01), Chow et al.
patent: 5300813 (1994-04-01), Joshi et al.
IBMTDB, Lithographic Patterns With a Barrier Liner, vol. 32, No. 103, Mar. 1990, pp. 114-115.
IBMTDB, Copper Multilevel Interconnections, vol. 33, No. 11, Apr. 1991, pp. 299-300.
IBMTDB, AG Metallurgy System for Integrated Circuit Devices vol. 13, No. 2, Jul. 1970, pp. 511-512.

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