Semiconductor device

Details Semiconductor device Semiconductor device

1995-06-26

1997-01-07

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257764, 257769, 257773, H01L 2348

Patent

active

055920233

ABSTRACT:
A semiconductor device which comprises a first insulator, a first conductor disposed on one side near a semiconductor substrate, a second conductor disposed on the opposite side to the substrate forming a tubular member together with the first conductor, and a second insulator surrounding the member. The first insulator is incorporated into the member, and the member and the first insulator constitute an electrical wiring. Since the wiring is composed of the first insulator and the first and second conductors surrounding the first insulator, an electric current flows the tubular member of the conductors. Therefore, when the device is operated by a high-frequency (for example 80 GHz or more) electric current, apparent increase of the wiring resistance due to the "skin effect" hardly occur and as a result, reduction of the operating speed can be prevented.

REFERENCES:
patent: 3988764 (1976-10-01), Cline et al.
patent: 4581291 (1986-04-01), Bongianni
patent: 4776087 (1988-10-01), Gronin et al.
patent: 4833519 (1989-05-01), Kawano et al.
patent: 5479053 (1995-12-01), Oda
"A Submicrion Triple Level Metallization Process For High Performance Application Specific Circuits" D. Pramanik et al. Jun. 1992 VMIC Conference.

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