Semiconductor device having a floating node that can maintain a

Details Semiconductor device having a floating node that can maintain a Semiconductor device having a floating node that can maintain a

1995-08-17

1997-01-07

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257409, 257535, H01L 2701, H01L 2906, H01L 21265

Patent

active

055920098

ABSTRACT:
In a dynamic random access memory device including an SOI substrate and a field shield isolation region, a p type impurity region is formed between an n type source/drain region of a transistor coupled to a storage node in a dynamic memory cell and an n type impurity region below a field shield electrode. A reverse bias voltage is supplied respectively between the p and n type impurity regions, and between the n type source/drain region of the transistor and the p type body region. As a result, leakage current from the n type source/drain region to the p type body region is compensated for by the leakage current from the n type impurity region to the p type impurity region.

REFERENCES:
patent: 5355012 (1994-10-01), Yamaguchi et al.
patent: 5440161 (1995-08-01), Iwamatsu et al.

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