Fishing – trapping – and vermin destroying
Patent
1995-01-18
1997-01-07
Quach, T. N.
Fishing, trapping, and vermin destroying
437192, 437195, H01L 21283
Patent
active
055916716
ABSTRACT:
A method for interconnecting layers in a semiconductor device, which can form a low resistance contact, is provided. An insulating layer is formed on a semiconductor substrate and an opening is formed in the insulating layer. The opening is a contact hole for exposing an impurity diffusion region formed on the semiconductor substrate, or a via hole for exposing a lower conductive layer formed on the semiconductor substrate. Subsequently, a titanium ohmic contacting layer and a titanium nitride barrier layer are formed in the interior of the opening hole and on the insulating layer in sequence. Thereafter, a refractory metal layer which completely fills the remainder of the opening hole by depositing the refractory metal on the barrier layer is formed. To improve a contacting property, the resultant is heat-treated at a temperature above 450.degree. C. As a result, oxidation of the ohmic contacting layer and the barrier layer is prevented, and silicide is actively formed on the interface between the ohmic contacting layer and the silicon substrate, whereby the contacting resistance can be improved. The effect is enhanced for contact holes having a high aspect ratio and a small diameter.
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Ogawa et al., "Interface microstructure of titanium thin-film/silicon single-crystal substrate correlated with electrical barrier heights", J. Appl. Phys., vol. 70, No. 2, 15 Jul. 1991, pp. 827-832.
Kim Young-sun
Park Young-wook
Quach T. N.
Samsung Electronics Co,. Ltd.
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