Semiconductor device with high voltage protection

Details Semiconductor device with high voltage protection Semiconductor device with high voltage protection

1997-04-17

1999-05-18

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, H01L23/62

Patent

active

059052872

ABSTRACT:
The object of the present invention is to provide a semiconductor device, which has a high protective capability against an excessive voltage applied from the outside. The device is provided, in its analog switch 30, with a P type dummy transistor 11 whose drain terminal is connected to a P type diffusion layer in the outside of a P type transfer gate 4 and whose gate and source terminals are connected to a power supply potential, and an N type dummy transistor 12 whose drain terminal is connected to an N type diffusion layer in the outside of an N type transfer gate 5 and whose gate and source terminals are connected to a ground potential, and when an excessive voltage is applied from the outside, an excessive current is made to flow through the P type and N type dummy transistors 11 and 12 to the power supply potential or the ground potential.

REFERENCES:
patent: 4609931 (1986-09-01), Koike
patent: 5160990 (1992-11-01), Osawa
patent: 5235201 (1993-08-01), Honna
patent: 5654571 (1997-08-01), Tsuji
patent: 5679971 (1997-10-01), Tamba et al.
patent: 5714784 (1998-02-01), Ker et al.

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