Semiconductor device having a dielectric film and a fabrication

Details Semiconductor device having a dielectric film and a fabrication Semiconductor device having a dielectric film and a fabrication

1997-07-29

1999-05-18

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 257769, H01L27/108

Patent

active

059052783

ABSTRACT:
A semiconductor memory device includes a memory cell capacitor for storing information, wherein the memory cell capacitor includes a capacitor insulation film of a double oxide on a lower electrode. The lower electrode has a layered structure of Ir/IrO.sub.2 /Ir or Ru/RuO.sub.2 /Ru acting as a diffusion barrier of oxygen or Pb. Further, the use of a Pt--Ir alloy is disclosed for the lower electrode.

REFERENCES:
patent: 5708284 (1998-01-01), Onishi
patent: 5717236 (1998-02-01), Shinkawata

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