Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-11-14
1993-06-29
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257390, 257503, 257508, 257629, 257659, H01L 2940, H01L 2702, H01L 2348
Patent
active
052237338
ABSTRACT:
A semiconductor integrated circuit device is provided which include a plurality of cell columns each having a number of unit cells previously fabricated on a semiconductor substrate selected from the plural kinds of unit cells which are formed in desired circuits by electrically connecting circuit devices previously arranged. Each column includes at least one kind of unit cell of a dynamic circuit which has a node in a floating state during the operation of the cell unit. A fixed potential shield layer is also provided on the cell columns so as to cover the nodes of the dynamic circuits. By virtue of this, a wiring area for electrically connecting the desired cell units can be located between the cell columns and above the shield layer. In other words, signal wirings in the wiring area can pass over the nodes of the dynamic circuits. without adverse parasitic effects. The unit cell can also be provided with a precharge circuit comprising a standard cell and an in-cell wiring layer. Further, clock input terminals of the unit cells which are provided with a precharge circuit can be divided into plural groups, with all of said clock input terminals belonging to the same group and having equal load capacitances being connected. Clock buffer cells can be provided for supplying clock signals to the clock signal wirings for each group.
REFERENCES:
patent: 4400713 (1983-08-01), Bauge et al.
patent: 4774559 (1988-09-01), Culican et al.
patent: 4829358 (1989-05-01), Yamazaki
patent: 4857987 (1989-08-01), Ogura et al.
patent: 4890148 (1989-12-01), Ikeda et al.
Asai Mitsuo
Doi Toshio
Hayashi Takehisa
Ishibashi Kenichi
Hitachi , Ltd.
James Andrew J.
Ngo Ngan V.
LandOfFree
Semiconductor integrated circuit apparatus and method for design does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit apparatus and method for design, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit apparatus and method for design will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1757686