Epitaxial growth method

Details Epitaxial growth method Epitaxial growth method

1997-01-03

1999-05-18

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 91, 117 98, 117102, 117105, 4272481, 4272551, 4272552, C30B25/14

Patent

active

059047690

ABSTRACT:
This invention provides an epitaxial growth method capable of decreasing variations of the resistance of an epitaxial layer resulting from an in-plane temperature distribution of a silicon wafer and also capable of reducing particles and haze. This epitaxial growth method is an epitaxial growth method of growing a boron- or phosphorus-doped silicon epitaxial layer on the surface of a silicon wafer with an in-plane temperature distribution of 2 to 50.degree. C., and includes the steps of arranging the silicon wafer in a reaction vessel, supplying into the reaction vessel a source gas containing (a) silane, (b) 5 to 600 vol % of hydrogen chloride added to the silane, and (c) a dopant consisting of a boron compound or a phosphorus compound, and growing a boron- or phosphorus-doped silicon epitaxial layer on the surface of the wafer by setting a vacuum degree of 10 to 200 torr in the reaction vessel and heating the wafer to 900 to 1100.degree. C.

REFERENCES:
patent: 5096534 (1992-03-01), Ozias
patent: 5198071 (1993-03-01), Scudder et al.
Growth of Silicon on Si (100) via Hydrogen/Chlorine Exchange and the Effect of of Interfacial Boron; Koleske, D;D; Gates, S.M; Beach, D.B; J. Appl. Phys. (1992), 72(9). pp. 4073-4082, 1992.
Regolini, J.L. and Bensahel, D., "Epitaxial Silicon Chemical Vapor Deposition Below Atmospheric Pressure", Materials Science & Engineering, 4(1):407-415, 1989.
Sato, Y. and Ohmine, T., "Wafer Rotation Effect on Silicon Epitaxial Growth", International Conference on Solid State Devices and Materials, Yokohama, Japan, pp. 717-718, 1991.

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