SRAM cell configuration and method for its fabrication

Details SRAM cell configuration and method for its fabrication SRAM cell configuration and method for its fabrication

1998-11-25

2000-03-14

Nelms, David

Static information storage and retrieval

Systems using particular element

Flip-flop

365180, 365188, 257385, G11C 1100

Patent

active

060381647

ABSTRACT:
The SRAM cell configuration has at least six transistors in each memory cell. Four of the transistors form a flip-flop and they are arranged at the corners of a quadrilateral. The flip-flop is driven by two of the transistors, which are disposed so as to adjoin diagonally opposite corners of the quadrilateral and outside the quadrilateral. Adjacent memory cells along a word line can be arranged in such a way that a first bit line and a second bit line of the adjacent memory cells coincide. The transistors are preferably vertical and are arranged at semiconductor structures (St1, St2, St3, St4, St5, St6) produced from a layer sequence. Two of the transistors having n-doped channel regions are preferably formed in each case on two semiconductor structures.

REFERENCES:
patent: 4794561 (1988-12-01), Hsu
patent: 5166902 (1992-11-01), Silver
patent: 5364810 (1994-11-01), Kosa et al.
patent: 5394358 (1995-02-01), Huang
patent: 5398200 (1995-03-01), Mazure et al.
patent: 5554870 (1996-09-01), Fitch et al.
patent: 5670803 (1997-09-01), Beistein, Jr. et al.
patent: 5955768 (1999-09-01), Liaw et al.
"SRAM Cell Designs Advance", Industry News, Semiconductor International, Nov. 1996.
Copy of copending U.S. application No. 09/138,160.

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