Method of resistless patterning of a substrate for implantation

Details Method of resistless patterning of a substrate for implantation Method of resistless patterning of a substrate for implantation

1997-02-25

1999-05-18

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438552, 438694, 438723, 438756, 438787, H01L21/425

Patent

active

059045523

ABSTRACT:
A method of ion implanting a substrate is disclosed, which includes providing a substrate having a surface. A sacrificial layer of semiconductor material is formed on the surface and resistlessly patterning to define masked and unmasked portions. The unmasked portions are etched away to form an implantation mask on the substrate. Ions are implanted in the substrate underlying the etched away unmasked portions and the sacrificial layer is removed.

REFERENCES:
patent: 5168072 (1992-12-01), Moslehi
patent: 5320972 (1994-06-01), Wylie
patent: 5427970 (1995-06-01), Hsue et al.
patent: 5428240 (1995-06-01), Lur
patent: 5597756 (1997-01-01), Fazan et al.
patent: 5672539 (1997-09-01), Thakur et al.

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