Performing a semiconductor fabrication sequence within a common

Details Performing a semiconductor fabrication sequence within a common Performing a semiconductor fabrication sequence within a common

1997-03-26

1999-05-18

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438913, H01L21/76

Patent

active

059045426

ABSTRACT:
An in situ process is provided for isolating semiconductor devices according to a LOCOS process. The invention contemplates performing field oxide growth, nitride layer removal, sacrificial oxide growth and removal, and gate oxide growth all within a single chamber without removing the wafers from the chamber during processing. The invention is believed to result in increased yields and process throughput by reducing the exposure of the wafers to outer-chamber contaminants, thermal stress, and transportation damage, as well as reducing inter-chamber transportation time. The invention also contemplates an in situ processing chamber adapted for performing field oxide growth, nitride layer removal, sacrificial oxide growth and removal, and gate oxide growth as part of a LOCOS isolation process. The in situ processing chamber is adapted for thermal oxidation and etching processes to implement the LOCOS isolation structure. A conventional oxidation furnace may be adapted to provide the in situ processing chamber by adapting the oxidation furnace to accept etchant gasses. Other conventional chambers or a specialized chamber may also be adapted according to the present invention for the in situ LOCOS process.

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"High Technology Manufacturing . . . " E L Hu, Emerging Technologies for In Situ Processing. Proceedings of the NATO Advanced Research Workshop, 1988, 1 page (abstract only).

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