Method of growing silicon monocrystalline rod

Details Method of growing silicon monocrystalline rod Method of growing silicon monocrystalline rod

1992-03-23

1993-11-02

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566207, 15662073, 15662074, 156602, C30B 2906

Patent

active

052580920

ABSTRACT:
The present invention is intended to provide a method of growing a silicon monocrystalline rod by an FZ process, wherein the dopant distribution of the silicon monocrystalline rod in the diametrical direction is made microscopically uniform, characterized in that a magnetic field forming means is arranged above and/or below a melting zone of said silicon monocrystalline rod to surround said silicon monocrystalline rod and a magnetic field is applied to the melting zone of the silicon monocrystalline rod through said magnetic forming means, and preferably the magnetic field forming means is constituted by supplying a direct electric current through a solenoid coil surrounding said silicon monocrystalline rod.

REFERENCES:
patent: 3086856 (1963-04-01), Siebertz
patent: 3211881 (1965-10-01), Jablonski et al.
patent: 3232745 (1966-02-01), Rummel et al.
patent: 3351433 (1967-11-01), Keller
patent: 3607139 (1971-09-01), Hanks
De Leon, "Growth of Homogeneous High Resistivity FZ Silicon Crystals Under Magnetic Filed Bias", J. of Crystal Growth, 55:406-08 (1981).

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