Method for production of a semiconductor laser

Details Method for production of a semiconductor laser Method for production of a semiconductor laser

1990-09-25

1991-10-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437108, 437974, 357 17, 148DIG25, 148DIG95, H01L 2120

Patent

active

050533568

ABSTRACT:
A semiconductor laser particularly adapted for operation in the self-pulsation mode and method for production thereof. A central mesa is formed in the upper cladding layer and normally requires relatively thick sections at either side of the mesa in order to form a wageguide of sufficient thickness to cause self-pulsation operation. In order to control the thickness of the upper cladding layer bounding the mesa, the mesa is first formed by etching the regions bounding the mesa to relatively thin sections capable of ready gauging by optical interferometry. A composite upper clading layer is then formed by utilizing MOCVD crystal growth techniques to form a buffer layer on the upper cladding layer bounding the mesa, the buffer layer having an aluminum content about the same as the aluminum content of the AlGaAs upper cladding layer. The composite layer functions as a comparatively thick waveguide which can be formed to the necessary thickness with adequate accuracy to provide a high yield when producing self-pulsation lasers according to the present invention.

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