Semiconductor memory with an improved nibble mode arrangement

Static information storage and retrieval – Read/write circuit – Signals

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365233, 3652335, G11C 700, G11C 800

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active

048751928

ABSTRACT:
A dynamic semiconductor memory includes a shift register which enables a nibble operation to be carried out, and a timing generator. The timing generator detects every transient state of the column address strobe signals to form shift pulses that are to be supplied to said shift register, as well as timing signals that are to be supplied to various internal circuits. The dynamic semiconductor memory having such a timing generator operates at high speeds, since it is accessed by the cycle number with a small change of the column address strobe signals.

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Fujishima et al., "A 256K Dynamic RAM with Page-Nibble Mode", IEEE Journal of Solid State Circuits, vol. SC-18, No. 5, Oct. 1983, pp. 470-478.

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