Method of producing monocrystalline semiconductor material, part

Details Method of producing monocrystalline semiconductor material, part Method of producing monocrystalline semiconductor material, part

1974-04-22

1976-02-17

Tayman, Jr., James H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

23301SP, 23273SP, 423348, B01J 1718

Patent

active

039390357

ABSTRACT:
A method for obtaining a homogeneous dislocation density in a semiconductor rod, by first subjecting the semiconductor rod in a known manner, to a crucible-free zone melting process whereby it becomes monocrystalline and free of dislocations, and thereafter an annealing zone is moved through the rod, under specified conditions.

REFERENCES:
patent: 3030194 (1962-04-01), Emeis
patent: 3441385 (1969-04-01), Schmidt

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