Semiconductor memory with word line charge absorbing circuit

Details Semiconductor memory with word line charge absorbing circuit Semiconductor memory with word line charge absorbing circuit

1983-03-17

1986-07-15

Moffitt, James W.

Static information storage and retrieval

Systems using particular element

Flip-flop

365230, 365242, 365190, G11C 1140, G11C 700

Patent

active

046010149

ABSTRACT:
A semiconductor memory circuit including a charge absorbing circuit. The charge absorbing circuit absorbs at least a current induced by a voltage increase in the word line occurring soon after the word line is switched from a selection state to a nonselection state.

REFERENCES:
patent: 4370736 (1983-01-01), Takahashi
patent: 4393476 (1983-07-01), Ong
patent: 4477885 (1984-10-01), Sharp
patent: 4488263 (1984-12-01), Herndon et al.

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