Semiconductor device with oxide layer

Details Semiconductor device with oxide layer Semiconductor device with oxide layer

1992-03-05

1994-02-22

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 57, 257 66, 257412, 257900, H01L 2976, H01L 2904, H01L 31036

Patent

active

052890309

ABSTRACT:
An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.

REFERENCES:
patent: 4468855 (1984-09-01), Sasaki
patent: 4557036 (1985-12-01), Kyuragi et al.
patent: 4746628 (1988-05-01), Takafuji et al.
patent: 4905066 (1990-02-01), Dohjo et al.
patent: 5097311 (1992-03-01), Iwase et al.

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