Nonvolatile semiconductor memory device

Static information storage and retrieval – Floating gate – Particular biasing

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Details

36518503, 36518529, G11C 1604

Patent

active

061543918

ABSTRACT:
A nonvolatile semiconductor memory device comprises an electrically rewritable memory cell transistor, in which a threshold voltage of an erase state of the memory cell transistor is a negative voltage, and a distribution of a threshold voltage of a programming state of the memory cell transistor is a distribution including a negative voltage region.

REFERENCES:
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patent: 5491657 (1996-02-01), Haddad et al.
patent: 5521867 (1996-05-01), Chen et al.
patent: 5910913 (1999-06-01), Kato et al.
patent: 6005802 (1999-12-01), Takeuchi et al.

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