PMOSFETS having indium or gallium doped buried channels and n+po

Details PMOSFETS having indium or gallium doped buried channels and n+po PMOSFETS having indium or gallium doped buried channels and n+po

1996-05-24

1998-06-16

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, H01L 2976, H01L 2994

Patent

active

057675570

ABSTRACT:
Sub-micron PMOSFETs including n.sup.+ polysilicon gates and buried channels having impurity concentrations comprising indium or gallium are provided. The buried channel PMOSFETs have improved short channel characteristics and are particularly suitable for use in CMOS technologies.

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