Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1995-06-06

1998-06-16

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

365200, G11C 700

Patent

active

057675449

ABSTRACT:
A nonvolatile storage element of single-layer gate structure constructed by arranging a floating gate formed of a conductive layer to partly overlap with a control gate formed of a diffused layer is provided with a barrier layer covering a part or the whole of the surface of the floating gate. Such nonvolatile storage elements are used for redundancy control of defects or change of functions.

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patent: 4970565 (1990-11-01), Wu et al.
patent: 5179536 (1993-01-01), Kasa et al.
IEEE International Solid-State Circuits Conference, "Nonvolatile Memories", Y. Naruke, et al., Digest of Technical Papers, Feb. 1989, pp. 128-129 and 311.
International Electron Device Meeting, "A High Performance CMOS Technology for 256K/1MB EPROMs", G. Gerosa, et al., 1985, pp. 631-634.
The Transactions of the Institute of Electronics, Information, and Communication Engineers, vol. 90, No. 47, May, 21, 1990, "A Partially Programmable ROM", Y. Kasa, et al., pp. 51-53.

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