Flash memory

Details Flash memory Flash memory

1998-12-08

2000-11-28

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257319, 257324, 257331, H01L 2972

Patent

active

061539066

ABSTRACT:
A flash memory. An oxide layer is on a substrate. A stacked gate is formed on the substrate. A tunnel diffusion region is formed in the substrate next to a first side of the stacked gate. The tunnel diffusion region extends to a portion of the substrate under the stacked gate. A doped region is formed in the substrate next to a second side of the stacked gate. The doped region is distant away from the stacked gate by a lateral distance. An inter-poly dielectric layer covers the tunnel diffusion region the doped region, and the stacked gate. A polysilicon layer is on the inter-poly dielectric layer and extends perpendicular to the stacked gate.

REFERENCES:
patent: 6043530 (2000-06-01), Chang
patent: 6075267 (2000-06-01), Taji et al.

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