Reverse self-aligned transistor integrated circuit

Details Reverse self-aligned transistor integrated circuit Reverse self-aligned transistor integrated circuit

1991-08-08

1993-08-10

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257401, H01L 2910, H01L 2978

Patent

active

052352048

ABSTRACT:
A method of forming self-aligned transistors which may be either bipolar or field effect is described. A heavily doped conductive layer of one conductivity type is formed upon a monocrystalline semiconductor substrate of the opposite conductivity type to that of the one type. The conductive layer may be polycrystalline silicon, tungsten silicide, titanium nitride or the like. An insulator layer is formed upon the surface of the conductive layer. Openings with substantially vertical sidewalls are formed through the conductive layer to the semiconductor substrate in at least the locations of the first element of the transistors to be formed. The structure is heated to form the heavily doped portions of the second element of said transistors of the one conductivity type by outdiffusing from the conductive layer. Controlled oxidation of the exposed substrate and sidewalls of the conductive layer is done until the desired low doped portion of the heavily doped portions of the second element of the transistor has been formed under the oxidized semiconductor substrate. This second element is the base where a bipolar transistor is being formed and the source/drain where a field effect transistor is being formed. A uniform thickness conformal insulating layer is then deposited on the insulator layer over the conductive layer and oxidized substrate and preferentially removing the insulating layer from the horizontal surfaces and leaving a sidewall insulating layer upon the substantially vertical sidewalls. The integrated circuit is completed and the appropriate electrical contacts are made to the elements of the transistors of the integrated circuit.

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Muller & Kamins, "Device Electronics for Integrated Circuits" .COPYRGT. 1986, pp. 71-72.

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