Semiconductor device with input protection circuit

Details Semiconductor device with input protection circuit Semiconductor device with input protection circuit

1992-05-26

1993-08-10

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257133, 257173, 257328, 257355, H01L 2702

Patent

active

052352013

ABSTRACT:
An N channel type MOSFET is formed in a P type semiconductor substrate. A drain of the N channel type MOSFET is connected to a V.sub.DD line. A P.sup.- type impurity layer is formed in contact with the drain of the N channel type MOSFET. An input protection circuit is formed in the P type semiconductor substrate. The input protection circuit comprises a diode D.sub.1 in which a cathode is connected to an input terminal and an anode is connected to a V.sub.SS line, and a diode D.sub.2 in which a cathode is connected to the V.sub.DD line and an anode is connected to the V.sub.SS line. The anode of the diodes D.sub.1 and D.sub.2 comprises a P.sup.- type impurity layer. Impurity concentration of the P.sup.- type impurity layer the diodes D.sub.1 and D.sub.2 are higher than that of the P.sup.- impurity layer formed in contact with the drain of the N channel type MOSFET. The anode can be used in common to both diodes D.sub.1 and D.sub.2.

REFERENCES:
patent: 4626882 (1986-12-01), Cottrell et al.

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