Method of etching a polysilicon pattern

Details Method of etching a polysilicon pattern Method of etching a polysilicon pattern

1995-11-08

1998-06-16

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438733, 438738, 438742, 438963, 438743, 438744, H01L 21302

Patent

active

057670188

ABSTRACT:
Pitting in active regions along the edges of a gate electrode when etching a composite comprising an anti-reflective coating on polysilicon is avoided by etching the anti-reflective coating with an etchant that forms a protective passivating coating on at least the sidewalls of the etched anti-reflective pattern and on the underlying polysilicon layer. Subsequently, anisotropic etching is conducted to remove the protective passivating coating from the surface of the polysilicon layer, leaving the etched anti-reflective pattern protected from the main polysilicon etch on at least its sidewalls by the passivating coating to prevent interaction. In another embodiment, the anti-reflective coating is etched without formation of a passivating coating, and the polysilicon layer subsequently etched with an etchant that forms a passivating coating.

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