Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1999-06-30

2000-11-28

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438597, 438618, 438624, 438474, 438963, 438781, H01L 2138, H01L 2144, H01L 21322

Patent

active

061535095

ABSTRACT:
In a method of manufacturing a semiconductor device including a semiconductor element formed on a semiconductor substrate, an SiOF film is formed at least on the top surfaces of metal wirings under condition that an in-chamber pressure is 5 mTorr or lower. The SiOF film can thus be buried into a space between the metal wirings without causing any void and the capacitance between the wirings can be prevented from increasing, while preventing the metal wirings from being damaged and preventing the aspect ratio from increasing.

REFERENCES:
patent: 5800877 (1998-09-01), Maeda et al.
patent: 5858869 (1999-01-01), Chen et al.
patent: 5920791 (1999-07-01), Yang et al.
patent: 5930655 (1999-07-01), Cooney, III et al.

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