Method of fabricating semiconductor device providing effective r

Details Method of fabricating semiconductor device providing effective r Method of fabricating semiconductor device providing effective r

1998-01-13

2000-11-28

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438633, 438687, 438659, 438629, 438672, H01L 214763

Patent

active

061535079

ABSTRACT:
There is provided a method of fabricating a semiconductor device, including the steps of forming a first insulating film on a semiconductor substrate, forming a metal wiring layer on the first insulating film, forming a second insulating film over both the first insulating film and the metal wiring layer at a temperature lower than a temperature at which the metal wiring layer is oxidized, implanting impurities into the second insulating film, the impurities having an ability of preventing diffusion of metal of which the metal wiring layer is made, and forming a third insulating film on the second insulating film. The method prevents an increase in electrical resistance of the metal wiring layer, and at the same time, improves oxidation resistance of the metal wiring layer and prevents diffusion of metal into an insulating film surrounding the metal wiring layer. As a result, the method provides long-term reliability and an enhanced fabrication yield to a semiconductor device.

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Miyazaki et al., "The Fabrication of Double-Level Copper Interconnection Using Dry Etching", Electronic Data Communication Academy Electronics Society Conference, pp. 117-118, C-419, (1995).
T. Takewaki et al., "Cu Interconnect Technology For Sub-quarter-micron ULSIs", Electronic Data Communication Academy Electronics Society Conference, pp. 115-116, C-418, (1995).

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