Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

1996-03-27

1998-06-16

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438308, 438795, H01L 2184

Patent

active

057669775

ABSTRACT:
In producing a semiconductor device using silicon semiconductor, thermal processing is performed in an atmosphere containing hydrogen. At this time, active hydrogen is generated by contacting the hydrogen to a heated nickel material. For example, a pipe which an inner surface thereof is covered with the nickel material is heated by a heater and a hydrogen gas is introduced into the pipe, in order to generate the active hydrogen, so that a semiconductor device formed on a resin substrate having a low heat resistance is annealed using the active hydrogen while maintaining at 150.degree. C. .+-.20.degree. C. for a desired period of time.

REFERENCES:
patent: 4113514 (1978-09-01), Pankove et al.
patent: 4605447 (1986-08-01), Brotherton et al.
patent: 5395804 (1995-03-01), Ueda
patent: 5397719 (1995-03-01), Kim et al.
patent: 5470763 (1995-11-01), Hamada
patent: 5504020 (1996-04-01), Aomori et al.

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