Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1990-10-04

1993-08-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 52, 437 60, 437203, 437233, 437919, H01L 21285

Patent

active

052348547

ABSTRACT:
A method for manufacturing a semiconductor device including a combined stack-trench type capacitor is disclosed. The method comprises the steps of: forming a conductive layer serving as a first electrode of the capacitor both on the inside region of a trench and on a transistor and forming a planarizing layer on the conductive layer; forming a photoresist pattern on the planarizing layer; etching the planarizing layer and the conductive layer; and removing the planarizing layer. The sandwiched planarizing layer between the second conductive layer and the photoresist pattern prevents the exposing of the first electrode pattern during the photoetching, so that uncontaminated uniform dielectric film can be obtained.

REFERENCES:
patent: 4794563 (1988-12-01), Maeda
patent: 4885262 (1989-12-01), Ting et al.
patent: 4944682 (1990-07-01), Cronin et al.
patent: 4951175 (1990-08-01), Kurosawa et al.
patent: 4966870 (1990-10-01), Barber et al.
patent: 4990463 (1991-02-01), Mori
patent: 5066608 (1991-11-01), Kim et al.
patent: 5077232 (1991-12-01), Kim et al.

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