Method of preparing a high electron mobility field effect transi

Details Method of preparing a high electron mobility field effect transi Method of preparing a high electron mobility field effect transi

1992-05-15

1993-08-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437203, H01L 21265, H01L 2144

Patent

active

052348490

ABSTRACT:
A high electron mobility field effect transistor (HEMT) inhibiting generation of leakage current otherwise caused by contact of a gate metallization layer with a channel layer, in which a GaInAs layer acting as a channel layer and an n-AlInAs layer acting as an electron supplying layer are stacked on a semi-insulating InP wafer with an AlInAs layer acting as a buffer layer in-between to form an island-shaped region, contact between the lateral wall surface of the island-shaped region and the gate metallization layer is to be inhibited. Specifically, the gate metallization layer is Schottky-connected in a planar state on a gate-forming surface provided by the upper surface of the n-AlInAs layer and is formed with an elevation overlying the gate-forming surface from the outer end of the gate-forming surface to outside. This elevation may be formed by forming a dummy gate on the island-shaped region for providing an elevated pseudo gate-forming surface, setting a sidewall so as to be raised to a higher level than an actual gate-forming surface on the lateral wall surfaces of the dummy gate and the island-shaped region, removing the dummy gate and depositing the gate metallization layer on the sidewall. The sidewall is ultimately removed to leave a void below the elevation. In this manner, the gate metallization layer becomes an air-bridged structure and the leakage current in the gate electrode is reduced while the gate parasitic capacity is diminished.

REFERENCES:
patent: 4965646 (1990-10-01), Ipri et al.
patent: 5053348 (1991-10-01), Mishra et al.

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