Process and material for manufacturing semiconductor devices

Details Process and material for manufacturing semiconductor devices Process and material for manufacturing semiconductor devices

1978-06-12

1989-05-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156668, 252 791, 134 1, 20419236, B44C 122, B29C 3700, C03C 1500, C03C 2506

Patent

active

RE0329282

ABSTRACT:
A process step and material for use in the manufacture of semiconductor devices. To facilitate the removal of organic photoresist material from a substrate, the material is exposed to a low pressure rf generated "cold" plasma (under 32.degree. C.) produced from a homogeneous gaseous binary mixture of oxygen and a halocarbon, where the halocarbon is preferably a gas having one carbon atom per molecule and fully fluorine-substituted, and wherein the mixture contains at least 25% of oxygen by volume.

REFERENCES:
patent: 3477936 (1969-11-01), Gillery et al.
patent: 3615956 (1971-10-01), Irving et al.
patent: 3654108 (1972-04-01), Smith
patent: 3816196 (1974-06-01), LaCombe
patent: 3837856 (1974-09-01), Irving et al.
The Merck Index of Chemicals & Drugs, Seventh Edition, Published by Merck & Co., Inc. in 1960, p. 112.

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