Method for producing compound thin films

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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118 49, 156612, 427 87, 427248B, 427248E, 427248J, 427255, B05D 500, B05D 512

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active

040584305

ABSTRACT:
A method is provided for growing highly oriented compound thin films on a substrate by subjecting the substrate to the vapor of a first single element which can react with the surface at a temperature sufficiently high for the reaction to occur which forms a single atomic layer of the first single element on the surface and then subjecting the thus formed surface with a first single element atomic layer thereon to the vapor of a second single element which can react with the first single element at a temperature sufficiently high for the reaction to occur so that a single atomic layer of the second single element is formed on the surface bound to the first single element. This procedure can then be repeated alternately subjecting the surface to the vapors of the first single element then to the second single element, etc. until the compound film reaches a desired thickness. There is further provided an apparatus for carrying out this method comprising a vacuum chamber with evacuating means, a support for supporting a substrate, sources for at least two vapors of two different single elements and operating means for providing on the substrate first a single atomic layer of one of the elements, and then a single atomic layer of the other of the elements.

REFERENCES:
patent: 3489621 (1970-01-01), Sirtl
patent: 3493430 (1970-02-01), Manasevit
patent: 3556837 (1971-01-01), Hammond
patent: 3576670 (1971-04-01), Hammond
patent: 3839084 (1974-10-01), Cho et al.
patent: 3862859 (1975-01-01), Ettenberg et al.
patent: 4000716 (1977-01-01), Kurata et al.
Curzon et al., J. Phys. D. Appl. Phys. vol. 5, No. 5 (1972), pp. 1046-1048.

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