Semiconductor device with transistors formed on different layers

Details Semiconductor device with transistors formed on different layers Semiconductor device with transistors formed on different layers

1998-01-27

2000-03-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257351, 257352, H01L 2701, H01L 2712, H01L 310392

Patent

active

06037635&

ABSTRACT:
In a thin film transistor circuit, active layers 113, 109 and 110 are formed using silicon films which are obtained by crystal growth in parallel to a substrate from a region into which nickel elements have been selectively introduced. In this situation, the active layer 113 is formed above a lower nickel introduced region 11. Then, the lower active layer 109 is formed below the upper nickel introduced region 10. With this structure, the integration density of the device can be enhanced.

REFERENCES:
patent: 5041884 (1991-08-01), Kumamoto et al.
patent: 5541432 (1996-07-01), Tsuji
patent: 5565697 (1996-10-01), Asakawa et al.
patent: 5585647 (1996-12-01), Nakajima et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5684320 (1997-11-01), Kawashima
patent: 5731613 (1998-03-01), Yamazaki et al.
patent: 5899547 (1999-05-01), Yamazaki et al.

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