Semiconductor device with first and second elements formed on fi

Details Semiconductor device with first and second elements formed on fi Semiconductor device with first and second elements formed on fi

1997-05-21

2000-03-14

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

438409, H01L 2176, H01L 2701, H01L 2712, H01L 310392

Patent

active

060376341

ABSTRACT:
An SOI semiconductor substrate of a semiconductor device includes an SOI layer, an embedded oxide film, a semiconductor substrate, an insulating layer, and a protective coat. The protective coat protects the insulating layer from an oxide film etchant in semiconductor manufacturing processes. The stress applied between the semiconductor substrate, embedded oxide film, and insulating layer is relaxed and restrained.

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