Semiconductor structures with trench contacts

Details Semiconductor structures with trench contacts Semiconductor structures with trench contacts

1997-06-30

2000-03-14

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, 257331, 257377, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

060376287

ABSTRACT:
Semiconductor structures such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs using trenches to establish a conductor. Improved control of the parasitic transistor in the trench MOSFET is also achieved and cell size and pitch is reduced relative to conventional structures.

REFERENCES:
patent: 4853345 (1989-08-01), Himelick
patent: 5366914 (1994-11-01), Takahashi et al.
patent: 5554862 (1996-09-01), Omura et al.
patent: 5623152 (1997-04-01), Majumdar et al.
patent: 5648670 (1997-07-01), Blanchard
patent: 5689128 (1997-11-01), Hshieh et al.
patent: 5719409 (1998-02-01), Singh et al.

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