Polycrystalline silicon resistors for integrated circuits

Details Polycrystalline silicon resistors for integrated circuits Polycrystalline silicon resistors for integrated circuits

1998-10-19

2000-03-14

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257379, 257903, 365 51, 365 63, H01L 2900

Patent

active

060376236

ABSTRACT:
A method for fabricating polycrystalline silicon resistor structures includes steps directed to the provision of a polycrystalline silicon structure having a decreased width. In one embodiment, sidewall spacers are used to narrow a region in which the polycrystalline silicon resistors are formed. In an alternative embodiment, polycrystalline silicon resistors are formed as sidewall structures in a resistor region. Use of either technique provides a reduced cross-section for the resistor structures, allowing shorter resistors to be used, or providing increased resistance for longer resistors.

REFERENCES:
patent: 4110776 (1978-08-01), Rao et al.
patent: 4774203 (1988-09-01), Ikeda et al.
patent: 4823179 (1989-04-01), Koshimaru
patent: 4835589 (1989-05-01), Pfiester
patent: 5012443 (1991-04-01), Ema
patent: 5825060 (1998-10-01), Spinner, III

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