Method of manufacturing a semiconductor device including a metal

Details Method of manufacturing a semiconductor device including a metal Method of manufacturing a semiconductor device including a metal

Filed on

1996-03-26

Date issued

1999-06-22

Examiner

Quach, T. N.

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating with electrically or thermally conductive material

SubSubClass

To form ohmic contact to semiconductive material

Other Related Categories

438714, 438723, 438906, 438974, H01L 2128, H01L 213065

Type

Patent

Status

active

Patent number

059152044

Description

ABSTRACT:
A method of manufacturing a semiconductor device comprises a step of forming a transition metal layer at least on an impurity diffusion layer of a semiconductor substrate, a step of forming a transition metal silicide in a self-aligned manner on the impurity diffusion layer by applying a heat treatment and a step of removing the transition metal layer other than that on the impurity diffusion layer, wherein the native oxide film on the impurity diffusion layer is removed by a plasma etching device capable of obtaining plasmas at a density of not less than 1.times.10.sup.11 /cm.sup.3 and not more than 1.times.10.sup.14 /cm.sup.3 prior to the step of forming the transition metal layer and the transition metal layer is formed successively. The native oxide film on the impurity diffusion layer can be removed uniformly, without causing damages such as crystal defects or surface roughness, so that the transition metal silicide layer can be formed as a low resistance flat layer with no grain agglomeration on a shallow impurity diffusion layer.

REFERENCES:
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patent: 4721553 (1988-01-01), Saito et al.
patent: 5043300 (1991-08-01), Nulman
patent: 5122251 (1992-06-01), Campbell et al.
patent: 5236868 (1993-08-01), Nulman
patent: 5487785 (1996-01-01), Horiike et al.
patent: 5627105 (1997-05-01), Delfino et al.
patent: 5726097 (1998-03-01), Yanagida

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